Low-frequency noise in high-k LaLuO3/TiN MOSFETs
نویسندگان
چکیده
منابع مشابه
Low-Frequency Noise in High-k LaLuO3/TiN MOSFETs
Low-frequency noise (LFN) characterization of high-k LaLuO3/TiN nMOS transistors is presented. The experimental results including the noise spectrum and normalized power noise density and mobility are reported. The noise results were successfully modeled to the correlated number and mobility fluctuation noise equation. High-k dielectric devices show lower mobility and roughly one to two orders ...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2012
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.05.070